DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As. HOLOS, [S. l.], v. 1, p. 288–296, 2018. DOI: 10.15628/holos.2018.6173. Disponível em: https://periodicos-treinamento.ifrn.edu.br/index.php/HOLOS/article/view/6173. Acesso em: 26 out. 2026.